| 摘要 |
<p>Semiconductor devices are produced by carrying out >=one etching operation, by means of a chemical solvent, on two layers of material placed on one surface of the device, the material of the upper layer, which provided with suitable discontinuities to define a predetermined contour or periphery having the function of a mask for the lower layer during the etching operation, and the material of the lower layer, e.g. SiO, having a considerably smaller smaller resistance to etching by the chemical solvent e.g. HF than that of the material of the upper layer, e.g. Si3N4 so that during the etching operation, which is effected via the mark, a definite quantity of material can be removed in a controlled manner from the lower layer under mark and along its contour.</p> |
