发明名称 SELECTIVE FORMATION METHOD OF FILMS
摘要 PURPOSE:To obtain a flat protecting film, insulation film, etc. on substrate surface by disposing the substrate formed with patterns of a chromium film in a reaction chamber, introducing Fe (Co)5 therein, specifying reaction pressure and growth temperature and growing a Fe2 O3 film in the regions where there are no chromium films on the substrate.
申请公布号 JPS5354476(A) 申请公布日期 1978.05.17
申请号 JP19760129744 申请日期 1976.10.28
申请人 FUJITSU LTD 发明人 SASAKI HIROO;IKEGAMI KAORU;NAKAYAMA KAZUFUMI;TAKAGI MIKIO
分类号 C23C16/04;C23C16/40;H01L21/316;H01L21/768;H01L23/522 主分类号 C23C16/04
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