MOS TYPE FIELD EFFECT TRANSISTOR,申请号JP19760129897-传众专利搜索

首页产品黄页商标征信

会员服务注册登录

法人/股东/高管

发明名称	MOS TYPE FIELD EFFECT TRANSISTOR
摘要
申请公布号	JPS5354485(A)	申请公布日期	1978.05.17
申请号	JP19760129897	申请日期	1976.10.27
申请人	NIPPON ELECTRIC CO	发明人	SAKAI KIYOSHI
分类号	H01L29/78;H01L29/423;H01L29/43;H01L29/49	主分类号	H01L29/78
代理机构		代理人
主权项
地址

您可能感兴趣的专利

Method for replacement of existing pipes and devices for carrying out the method

Process for the cathodic protection of a suspension device

Web roll and web roll cassette detachably mounted in printer

Method and circuit to limit the inrush current

Oxide superconducting wire,method of preparing the same, and oxide superconducting stranded wire and conductor employing the same

Headliner for motor vehicule

APPLICATOR FOR DISPENSING MATERIAL FROM A DUAL CHAMBER CARTRIDGE

Sliding bearing and manufacturing method thereof

NOVEL BILE ACID-CONVERTING MICROORGANISM

NONWOVEN FABRIC FOR AN ALKALINE BATTERY SEPARATOR AND METHOD FOR PRODUCING THE SAME

Intermittent measuring of arterial oxygen saturation of hemoglobin

Process of final passivation of an integrated circuit device

Control device for controlling movements of a plurality of mobile sequential elements along parallel straight paths

Call set up between two telecommunication terminals

Improvements in the laying of channelizing lines of application means such as signal transmissions, energy and fluid conductions and other purposes

Universal cable take-off system

Computational circuit for adding multi-valued numbers