发明名称 |
SEMICONDUCTOR MEMORY CIRCUIT |
摘要 |
PURPOSE:To realize the reduced power consumption of a circuit and improved sensitivity and safety by lowering the pre-charge of a logitudinal line with a large load capacity and by making the amplitude of a sense node larger than that of the longitudinal line. |
申请公布号 |
JPS5354431(A) |
申请公布日期 |
1978.05.17 |
申请号 |
JP19760129910 |
申请日期 |
1976.10.27 |
申请人 |
NIPPON ELECTRIC CO |
发明人 |
WADA TOSHIO |
分类号 |
G11C11/409;G11C11/407;G11C11/4091 |
主分类号 |
G11C11/409 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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