发明名称 SEMICONDUCTOR MEMORY CIRCUIT
摘要 PURPOSE:To realize the reduced power consumption of a circuit and improved sensitivity and safety by lowering the pre-charge of a logitudinal line with a large load capacity and by making the amplitude of a sense node larger than that of the longitudinal line.
申请公布号 JPS5354431(A) 申请公布日期 1978.05.17
申请号 JP19760129910 申请日期 1976.10.27
申请人 NIPPON ELECTRIC CO 发明人 WADA TOSHIO
分类号 G11C11/409;G11C11/407;G11C11/4091 主分类号 G11C11/409
代理机构 代理人
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