发明名称 |
Induced junction solar cell and method of fabrication |
摘要 |
An induced junction solar cell is fabricated on a p-type silicon substrate by first diffusing a grid of criss-crossed current collecting n+ stripes and thermally growing a thin SiO2 film, and then, using silicon-rich chemical vapor deposition (CVD), producing a layer of SiO2 having inherent defects, such as silicon interstices, which function as deep traps for spontaneous positive charges. Ion implantation increases the stable positive charge distribution for a greater inversion layer in the p-type silicon near the surface. After etching through the oxide, to parallel collecting stripes, a pattern of metal is produced consisting of a set of contact stripes over the exposed collecting stripes and a diamond shaped pattern which functions as a current collection bus. Then the reverse side is metallized.
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申请公布号 |
US4090213(A) |
申请公布日期 |
1978.05.16 |
申请号 |
US19760696374 |
申请日期 |
1976.06.15 |
申请人 |
CALIFORNIA INSTITUTE OF TECHNOLOGY |
发明人 |
MASERJIAN, JOSEPH;CHERN, SHY SHIUN;LI, SEUNG P. |
分类号 |
H01L31/062;(IPC1-7):H01L27/14 |
主分类号 |
H01L31/062 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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