| 发明名称 |
Method for depositing continuous pinhole free silicon nitride films and products produced thereby |
| 摘要 |
A substrate article coated with a pinhole free film of silicon nitride produced by reacting silane with a nitrogen containing compound which upon decomposition produces nascent nitrogen and sufficient amounts of a carrier gas that is inert to the reactants and heating said substrate to a temperature above about 500 DEG C to cause the deposition of silicon nitride film on said substrate.
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| 申请公布号 |
US4089992(A) |
申请公布日期 |
1978.05.16 |
| 申请号 |
US19760718720 |
申请日期 |
1976.08.30 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DOO, VEN Y.;NICHOLS, DONALD R.;SILVEY, GENE A. |
| 分类号 |
C23C16/34;H01L21/00;H01L21/318;H01L23/29;(IPC1-7):B05D5/12 |
主分类号 |
C23C16/34 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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