发明名称 |
Method of passivating and planarizing a metallization pattern |
摘要 |
Disclosed is a process for passivating a first metallization pattern on a semiconductor substrate and providing a substantially planar quartz surface for subsequent metallization patterns in which a first polymer layer is applied over a first metallization layer and other portions of the substrate, providing a substantially planar surface. After a first curing, the first layer of polymer material is removed down to a thin layer of defined thickness over the first metallization pattern and, after a second curing, a quartz layer is applied over the polymer layer forming a substantially planar quartz top surface. Also disclosed is a method of forming via holes to the first metallization pattern as well as particular photoresist resins.
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申请公布号 |
US4089766(A) |
申请公布日期 |
1978.05.16 |
申请号 |
US19770807693 |
申请日期 |
1977.06.17 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
PAAL, GABOR;SCHACKERT, KLAUS |
分类号 |
H01L23/522;H01L21/31;H01L21/312;H01L21/768;(IPC1-7):C23C15/00;B29C17/08 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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