发明名称 Method of passivating and planarizing a metallization pattern
摘要 Disclosed is a process for passivating a first metallization pattern on a semiconductor substrate and providing a substantially planar quartz surface for subsequent metallization patterns in which a first polymer layer is applied over a first metallization layer and other portions of the substrate, providing a substantially planar surface. After a first curing, the first layer of polymer material is removed down to a thin layer of defined thickness over the first metallization pattern and, after a second curing, a quartz layer is applied over the polymer layer forming a substantially planar quartz top surface. Also disclosed is a method of forming via holes to the first metallization pattern as well as particular photoresist resins.
申请公布号 US4089766(A) 申请公布日期 1978.05.16
申请号 US19770807693 申请日期 1977.06.17
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 PAAL, GABOR;SCHACKERT, KLAUS
分类号 H01L23/522;H01L21/31;H01L21/312;H01L21/768;(IPC1-7):C23C15/00;B29C17/08 主分类号 H01L23/522
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