| 发明名称 |
MANUFACTURE OF SEMICONDUCTOR EPITAXIAL GROWTH LAYER |
| 摘要 |
<p>PURPOSE:To secure an epitaxial growth of p or n type III-V group compound semiconductor, by varying the cooling velocity of the solution containing IVgroup dopant.</p> |
| 申请公布号 |
JPS5353253(A) |
申请公布日期 |
1978.05.15 |
| 申请号 |
JP19760128667 |
申请日期 |
1976.10.25 |
| 申请人 |
SHARP KK |
发明人 |
HAYASHI HIROSHI;SAKURAI TAKESHI;MURATA KAZUHISA |
| 分类号 |
C30B19/00;C30B29/40;H01L21/208;H01L33/30 |
主分类号 |
C30B19/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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