| 发明名称 |
MANUFACTURE OF SEMICONDUCTOR DEVICE |
| 摘要 |
PURPOSE:To obtain a semiconductor device possessing a double poly Si structure which features a large insulating voltage resistance between the poly Si films without adding special processes. |
| 申请公布号 |
JPS5353262(A) |
申请公布日期 |
1978.05.15 |
| 申请号 |
JP19760128652 |
申请日期 |
1976.10.25 |
| 申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
HATANAKA MASAHIRO;YOSHIHARA TSUTOMU |
| 分类号 |
H01L27/10;H01L21/768;H01L21/8242;H01L27/108;H01L29/78 |
主分类号 |
H01L27/10 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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