| 发明名称 |
MANUFACTURE FOR SEMICONDUCTOR DEVICE |
| 摘要 |
PURPOSE:To manufacture duplicated insulating layers on the substrate and to manufacture the impurity added layer without injuring the flatness of the substrate surface from the second layer opening part. |
| 申请公布号 |
JPS5351981(A) |
申请公布日期 |
1978.05.11 |
| 申请号 |
JP19760126959 |
申请日期 |
1976.10.21 |
| 申请人 |
FUJITSU LTD |
发明人 |
SEI HIDEO;ARAKAWA ISAO;MIYAMOTO YOSHIHIRO |
| 分类号 |
H01L29/762;H01L21/339;H01L27/10;H01L29/76;H01L29/768;H01L29/772 |
主分类号 |
H01L29/762 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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