| 发明名称 |
SELECTIVE GROWTH METHOD FOR SEMICONDUCTOR CRYSTAL |
| 摘要 |
PURPOSE:To easily obtain the selective growth layer with a good uniformity, by making crystal growth thru the provision of the low melting point metallic layer and high melting point metallic layer on the substrate of chemical semiconductor. |
| 申请公布号 |
JPS5351964(A) |
申请公布日期 |
1978.05.11 |
| 申请号 |
JP19760127055 |
申请日期 |
1976.10.21 |
| 申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
ISHIHARA OSAMU;OOTSUBO CHIKAYUKI;MITSUI SHIGERU |
| 分类号 |
C30B19/00;H01L21/208;H01L33/30;H01L33/36 |
主分类号 |
C30B19/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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