Drawing monocrystalline semiconductor strip - from molten film, with strip thickness determined by film size and drawing rate

摘要

A monocrystalline semiconductor strip is pulled by a seed crystal from a molten semiconductor film which has been produced by focussed radiation. The strip thickness is determined by the spatial extension of the molten film and by the pulling rate. The width of the pulled strip is kept constant by plates, made of the same semiconductor material, which bound the molten film on the sides. Process eliminates the crystal defects, introduced by using C plates, when C may partly become dissolved in the Si and produce twins, dislocations or SiC inclusions.