发明名称 |
Actinic radiation emissive pattern defining masks for fine line lithography and lithography utilizing such masks |
摘要 |
An actinic radiation emissive mask for a high resolution lithography emits actinic radiation which originates within the mask. The mask patterns the actinic radiation to expose resist in accordance with a desired pattern. The actinic radiation originating in the mask may be produced by radioactivity, stimulated emission or combinations thereof.
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申请公布号 |
US4088896(A) |
申请公布日期 |
1978.05.09 |
申请号 |
US19760752638 |
申请日期 |
1976.12.20 |
申请人 |
ROCKWELL INTERNATIONAL CORPORATION |
发明人 |
ELKINS, PERRY E.;JONES, A. BROOKE;REEKSTIN, JR., JOHN P. |
分类号 |
G03F1/14;G03F7/20;G21H5/00;(IPC1-7):G21K5/04 |
主分类号 |
G03F1/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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