发明名称 Actinic radiation emissive pattern defining masks for fine line lithography and lithography utilizing such masks
摘要 An actinic radiation emissive mask for a high resolution lithography emits actinic radiation which originates within the mask. The mask patterns the actinic radiation to expose resist in accordance with a desired pattern. The actinic radiation originating in the mask may be produced by radioactivity, stimulated emission or combinations thereof.
申请公布号 US4088896(A) 申请公布日期 1978.05.09
申请号 US19760752638 申请日期 1976.12.20
申请人 ROCKWELL INTERNATIONAL CORPORATION 发明人 ELKINS, PERRY E.;JONES, A. BROOKE;REEKSTIN, JR., JOHN P.
分类号 G03F1/14;G03F7/20;G21H5/00;(IPC1-7):G21K5/04 主分类号 G03F1/14
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