发明名称 |
Method of making semiconductor superlattices free of misfit dislocations |
摘要 |
A method of growing superlattice crystals containing alternating layers of two semiconductor materials in which misfit and threading dislocations are eliminated by growing the layers of superlattice crystal to some thickness less than that which will generate new dislocations, and matching the average lattice parameter of the superlattice with that of substrate so misfit dislocations between the superlattice and the substrate are not formed.
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申请公布号 |
US4088515(A) |
申请公布日期 |
1978.05.09 |
申请号 |
US19750565298 |
申请日期 |
1975.04.04 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BLAKESLEE, A. EUGENE;MATTHEWS, JOHN WAUCHOPE |
分类号 |
C30B25/02;C23C16/44;C30B19/10;C30B19/12;C30B29/40;H01L21/20;H01L21/205;H01L29/15;H01L31/0352;H01L33/00;(IPC1-7):H01L21/20;H01L29/06 |
主分类号 |
C30B25/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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