发明名称 |
Fabrication of semiconductor integrated circuit structure including injection logic configuration compatible with complementary bipolar transistors utilizing simultaneous formation of device regions |
摘要 |
A version of integrated injection logic is disclosed in which both the switching transistor and the current source transistor are of the vertical type and in which the logic gates are fabricated in the same semiconductor integrated chip with linear circuits which are based on the complementary bipolar integrated circuit technology.
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申请公布号 |
US4087900(A) |
申请公布日期 |
1978.05.09 |
申请号 |
US19760733057 |
申请日期 |
1976.10.18 |
申请人 |
BELL TELEPHONE LABORATORIES, INCORPORATED |
发明人 |
YIANNOULOS, ARISTIDES ANTONY |
分类号 |
H01L21/8222;H01L27/02;(IPC1-7):H01L21/22;H01L21/20 |
主分类号 |
H01L21/8222 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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