发明名称 |
Method of manufacturing a semiconductor device |
摘要 |
A method of manufacturing a semiconductor device, comprises the steps of masking desired parts of a semiconductor substrate with a material which is impervious to an etchant for the substrate, exposing the substrate to the etchant to thereby etch substrate parts which lie directly beneath end parts of the etchant-impervious material and substrate parts which are not masked, applying a solution preferentially into the parts directly beneath the end parts of the etchant-impervious material among the etched substrate parts, the solution being capable of being converted into a semiconduct or oxide by a predetermined heat treatment, and heat-treating the substrate in order to oxidize the etched substrate surface parts.
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申请公布号 |
US4088516(A) |
申请公布日期 |
1978.05.09 |
申请号 |
US19760737032 |
申请日期 |
1976.10.29 |
申请人 |
HITACHI, LTD. |
发明人 |
KONDO, HIROYUKI;NITTA, TAKAHISA;MORIGUCHI, YOSHIRO |
分类号 |
H01L21/76;H01L21/316;H01L21/32;H01L21/762;H01L29/732;(IPC1-7):H01L21/22 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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