| 摘要 |
1,261,365. Semi - conductor devices. SPRAGUE ELECTRIC CO. 21 April, 1969 [29 April, 1968], No. 20168/69. Heading H1K. The radiation resistance of an oxide coating on the semi-conductor body of a device is increased by introducing chromium and its oxides into the sites of non-regular bonds in the oxide lattice. In a typical embodiment an IGFET structure formed by diffusing spaced source and drain regions into a 10 ohm/cm. N-type silicon body is coated to a thickness of 1500 with silicon oxide by heating in oxygen. After heating in nitrogen to empty the sites of non-regular bonds and etching to thin the coating and expose the source and gate regions chromium is vapour deposited overall by electron bombardment of a pure chromium source and the assembly heated for 10 minutes at 450‹ C. to diffuse the chromium into the oxide. The residual surface chromium is then shape etched to form electrodes to which aluminium leads are bonded. Alternatively the chromium is removed and replaced by another electrode materal or is overcoated with such material.
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