Semiconductor detector prodn. using planar techniques - forms several detectors on silicon disc whose front junctions are produced by implantation

摘要

Certain steps of the planar technique are combined in the production of the semiconductor detectors, such as surface passivation, photolacquer masking, ion etching and ion implantation, in a manner obviating the use of high temperature processes. In this manner several detectors are produced on a silicon disc. The front side pn-junctions of the detectors are produced by implantation, using very small window thickness. The rear contact is formed by an implanted layer of defined surface resistance. The polished or ion etched silicon disc is first passivated by a protective film and windows are opened, using a photolacquer mask by chemical treatment or ion etching. The protective film is stripped completely from the rear. The front side is treated by ion implantation in specified manner. Finally a temperature activation and possibly metallising completes the process.