发明名称 SEMICONDUCTOR TYPE IGNITING DEVICE
摘要 PURPOSE:When the igniting device is protected by detecting abnormal high voltages of the power voltage in the semiconductor type igniting device, the maximum collector current of the driving transistor is restricted, and cost reduction is schemed.
申请公布号 JPS5348135(A) 申请公布日期 1978.05.01
申请号 JP19760122813 申请日期 1976.10.15
申请人 HITACHI LTD 发明人 SUGIURA NOBORU
分类号 F02P3/04;F02P3/045;F02P3/055 主分类号 F02P3/04
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