| 发明名称 |
METHOD OF FABRICATING A TRANSISTOR HAVING IMPROVED EMITTER-BASE JUNCTION BREAKDOWN VOLTAGE CHARACTERISTICS |
| 摘要 |
A process for producing in a transistor a slumped base profile wherein the base diffusion window is reoxidized, a layer of P2O5 is deposited over the oxide, an insulating layer deposited over the P2O5, an emitter window opened, and emitter diffusion made.
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| 申请公布号 |
US3650854(A) |
申请公布日期 |
1972.03.21 |
| 申请号 |
USD3650854 |
申请日期 |
1970.08.03 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORP. |
发明人 |
HERBERT M. DEMSKY;ALAN PLATT;ARTHUR J. RIDEOUT;ROBERT S. SAMSON |
| 分类号 |
H01L21/00;H01L21/22;H01L29/00;H01L29/73;(IPC1-7):H01L7/44 |
主分类号 |
H01L21/00 |
| 代理机构 |
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代理人 |
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