发明名称 |
METAL OXIDE/INDIUM PHOSPHIDE SEMICONDUCTOR DEVICES |
摘要 |
Devices using a transparent conductive layer of indium oxide or indium tin oxide, and a layer of a direct gap semiconductor material have been found to operate as solar cells and as light emitting devices. Exemplary of such devices is an indium tin oxide/p-InP cell which shows a 12.5% solar power conversion efficiency and also emits a red colored light when biased. |
申请公布号 |
IL54018(D0) |
申请公布日期 |
1978.04.30 |
申请号 |
IL19780054018 |
申请日期 |
1978.02.10 |
申请人 |
WESTERN ELECTRIC CO INCORP |
发明人 |
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分类号 |
H01L31/04;H01L31/072;H01L33/00 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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