LATERAL TRANSISTOR STRUCTURE AND METHOD OF MAKING THE SAME

摘要

A process for making a lateral PNP semiconductor device having a beta within the range of 5 to 500 wherein, during a heating stage, a metallic layer is left covering the surface of the wafer above substantially all of the base region separating the emitter and collector regions. The resultant effect is to cause a marked increase in the current gain of the transistor thus constructed over those similar devices manufactured in accordance with prior art processes.