| 发明名称 |
PRODUCTION OF INSULATED GATE TYPE FIELD EFFECT TRANSISTOR HAVING MEMORY ACTION |
| 摘要 |
PURPOSE:In the memory element of an insulated gate type field effect transistor having a tickness difference in the oxide layer of gate parts, the channel length of memory part is reduced and mutual conductance is increased. |
| 申请公布号 |
JPS5347279(A) |
申请公布日期 |
1978.04.27 |
| 申请号 |
JP19760122119 |
申请日期 |
1976.10.12 |
| 申请人 |
SONY CORP |
发明人 |
MOCHIZUKI HIDENOBU;OOTSU KOUJI;SHIMADA TAKASHI |
| 分类号 |
H01L21/8247;H01L29/788;H01L29/792 |
主分类号 |
H01L21/8247 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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