| 摘要 |
<p>1508720 Contact pads for a semiconductor device ITT INDUSTRIES Inc 27 July 1976 [4 Aug 1975] 31235/76 Heading H1K Raised contact pads 34 in a semiconductor body comprise recessed regions 36 of anodized semiconductor material, extending above the body, and layers 38 of a conductive material. The regions 36 are formed by applying a positive voltage to the masked semiconductor body immersed in an electrolyte such as boric, sulphuric, nitric or phosphoric acid. It is stated that the electrolyte selected continuously etches the oxidized film produced so as to form a bulky, porous anodized region 36. This porous, anodized region may also be obtained by applying a voltage to the masked body sufficiently high to break down the anodized film formed. As shown, emitter and base regions 32, 30 respectively, formed in the semiconductor body are contacted by evaporated aluminium layers 38 through windows 42 in an oxide coating 40. As shown, the raised contact pads 34 engage metallized regions 46 on a substrate 44. Voltage-current characteristics of the electrolyte are disclosed.</p> |
