发明名称 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND ITS MANUFACTURE
摘要 PURPOSE:A high-density region is provided adjoining to the outside of one or both of a source or a drain, thereby manufacturing an effective nonvolatile memory device which has a low avalanche breakdown voltage.
申请公布号 JPS5345983(A) 申请公布日期 1978.04.25
申请号 JP19760120765 申请日期 1976.10.07
申请人 NIPPON ELECTRIC CO 发明人 KIKUCHI MASANORI
分类号 H01L21/306;H01L21/8247;H01L29/788;H01L29/792 主分类号 H01L21/306
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