| 摘要 |
A memory system includes a plurality of word lines arranged in parallel in a predetermined direction, a plurality of sense lines arranged in parallel to be transverse to the word lines, and memory cells located at the intersections of both the sense lines and the word lines. In addition, a control line is arranged for each of the sense lines in parallel thereto such that the selection of a given word line and a given control line enables the reading or writing of information from or to the cell located at the intersection of the selected lines.
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