发明名称 CHARGED COUPLED DEVICE WITH NON-DESTRUCTIVE FET CHARGE SENSING
摘要 <p>A semiconductor device comprising a charge transfer device having a plurality of storage sites and a plurality of field effect transistors for reading the charge condition at a plurality of said sites. This is accomplished by locating the channels of the field effect transistors below the storage sites to be read and controlling or affecting the size of the channels by the amount of charge stored at the associated sites. Measuring the current through the channel thus indicates the charge level.</p>
申请公布号 CA1030264(A) 申请公布日期 1978.04.25
申请号 CA19730186917 申请日期 1973.11.28
申请人 N.V. PHILIPS'GLOEILAMPENFABRIEKEN 发明人 SHANNON, JOHN M.
分类号 G11C27/04;G09F9/33;H01L21/339;H01L27/00;H01L27/148;H01L29/762;H01L29/768;H01L31/12;H03H11/26;H04N5/335;H05B33/00;(IPC1-7):01L29/40 主分类号 G11C27/04
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