发明名称 |
CHARGED COUPLED DEVICE WITH NON-DESTRUCTIVE FET CHARGE SENSING |
摘要 |
<p>A semiconductor device comprising a charge transfer device having a plurality of storage sites and a plurality of field effect transistors for reading the charge condition at a plurality of said sites. This is accomplished by locating the channels of the field effect transistors below the storage sites to be read and controlling or affecting the size of the channels by the amount of charge stored at the associated sites. Measuring the current through the channel thus indicates the charge level.</p> |
申请公布号 |
CA1030264(A) |
申请公布日期 |
1978.04.25 |
申请号 |
CA19730186917 |
申请日期 |
1973.11.28 |
申请人 |
N.V. PHILIPS'GLOEILAMPENFABRIEKEN |
发明人 |
SHANNON, JOHN M. |
分类号 |
G11C27/04;G09F9/33;H01L21/339;H01L27/00;H01L27/148;H01L29/762;H01L29/768;H01L31/12;H03H11/26;H04N5/335;H05B33/00;(IPC1-7):01L29/40 |
主分类号 |
G11C27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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