| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
PURPOSE:To manufacture the highly-integrated device by making its mutual conductance large without expanding the area of the gate concerning with the electric capacity of the gate and source of the drain. |
| 申请公布号 |
JPS5345979(A) |
申请公布日期 |
1978.04.25 |
| 申请号 |
JP19760120522 |
申请日期 |
1976.10.06 |
| 申请人 |
MATSUSHITA ELECTRONICS CORP |
发明人 |
ITOU KOUJI |
| 分类号 |
H01L29/80;H01L21/331;H01L21/337;H01L21/8234;H01L27/07;H01L27/088;H01L27/095;H01L29/73;H01L29/78;H01L29/808;H01L29/861 |
主分类号 |
H01L29/80 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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