发明名称 Stabilisation of two bubble types in crystal lattice bubble memory - using magnetic film with easy axis at angle to crystal substrate axis
摘要 <p>Different types of bubbles are produced by implantation of ions in a magnetic bubble film placed or deposited on a nonmagnetic substrate. An artificial crystal is formed on an oriented nonmagnetic crystalline seed, so that the crystal produced has a 111 longitudinal axis and a (111) plane normal to this. The crystal, with oriented axis, is cut at an angle of 90 degrees to the 111 axis and then a substrate is produced with its vertical axis inclined at a small angle to the 111 axis. The magnetic bubble film is produced on this substrate, so that a film with a number of bubble types is produced, with its magnetic main axis (easy axis) at an angle which is a small multiple of the small angle of inclination to the 111 axis. Ions are implanted in the surface of this film in order to stabilise 2 different types of bubbles. Two stable types of bubbles are produced, instead of only one type. The crystal consists of a Gd-Ga garnet and the film of Gd-Ga garnet with S=1 and S=0 or S=1/2 bubbles or Y2.38La0.09Eu0.53Fe3.9Ga1.1O12 with S=0 and S=1 stabilised bubbles. The cut is made at 1 1/2-10 degrees, esp. 4 degrees to the axis, so that the easy axis is at >6 degrees, esp. 22 degrees and a considerable component of the easy axis is in the plane of the film.</p>
申请公布号 NL7611749(A) 申请公布日期 1978.04.25
申请号 NL19760011749 申请日期 1976.10.22
申请人 SPERRY RAND CORPORATION TE NEW YORK. 发明人
分类号 G11C11/14;H01F10/24;H01F10/28;H01F41/14;(IPC1-7):01F10/00;11C11/14;01F41/14 主分类号 G11C11/14
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