| 发明名称 |
MANUFACTURE OF SEMICONDUCTOR MEMORY DEVICE |
| 摘要 |
PURPOSE:To realize the improved integration and the increased memory capacity, by forming a base and an emitter layers from one window formed on an insulating film. |
| 申请公布号 |
JPS5345989(A) |
申请公布日期 |
1978.04.25 |
| 申请号 |
JP19760120726 |
申请日期 |
1976.10.06 |
| 申请人 |
FUJITSU LTD |
发明人 |
MORI AKISUKE;MAKABE KUNIAKI |
| 分类号 |
G11C17/14;G11C17/00;H01L21/225;H01L21/8229;H01L27/102 |
主分类号 |
G11C17/14 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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