发明名称 |
MANUFACTURE OF SEMICONDUCTOR MEMORY DEVICE |
摘要 |
PURPOSE:A base and an emitter are made from one window of an insulating film and the base layer is made large at its minimum by means of an overetching technique to prevent the collector-emitter junction from breaking, thereby obtaining a large-capacity memory device which has high integration and high reliability. |
申请公布号 |
JPS5345990(A) |
申请公布日期 |
1978.04.25 |
申请号 |
JP19760120727 |
申请日期 |
1976.10.06 |
申请人 |
FUJITSU LTD |
发明人 |
MORI AKISUKE;MAKABE KUNIAKI |
分类号 |
G11C17/14;G11C17/00;H01L21/22;H01L21/8229;H01L27/102 |
主分类号 |
G11C17/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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