ULTRALOW-POWER, MICRO-MINIATURIZED JOSEPHSON DEVICES HAVING HIGH INDUCTANCE

摘要

Superconducting devices comprising at least a pair of Josephson tunneling junctions and means for providing a large kinetic inductance interconnecting the pair of Josephson junctions are disclosed. The kinetic inductance is obtained by providing, as a portion of the device, a superconducting element having a thickness much less than its penetration depth. The high inductance devices provided by this means permit an overall increase in device packing density and power reduction, not obtainable with conventional structures. The resulting devices have enhancement ratios of at least one.