发明名称 |
Batch process providing beam leads for microelectronic devices having metallized contact pads |
摘要 |
A monometallic batch process for forming beam leads of a preferred metal such as aluminum or gold. The process is applied to a wafer of finished microelectronic devices already having metal contact pads of the same preferred metal. Where aluminum is the desired metal, high deposition rates are used to minimize aluminum oxide contamination. High yield is achieved by forming the beam leads to have an elevated cantilevered configuration, by deep scribing of the wafer and, when desired, by providing an energy absorbing cushion to reduce the effect of collisions between chip edges and beam leads.
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申请公布号 |
US4086375(A) |
申请公布日期 |
1978.04.25 |
申请号 |
US19750629736 |
申请日期 |
1975.11.07 |
申请人 |
ROCKWELL INTERNATIONAL CORPORATION |
发明人 |
LACHAPELLE, JR., THEODORE J.;DAVIS, JOHN R.;LICARI, JAMES J. |
分类号 |
H01L21/033;(IPC1-7):B05D5/12;H01L21/00 |
主分类号 |
H01L21/033 |
代理机构 |
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代理人 |
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