发明名称 |
PRZYRZAD POLPRZEWODNIKOWY WYSOKONAPIECIOWY |
摘要 |
A high voltage semiconductor device structure comprises a novel edge contour which directly contributes to increased voltage handling capability. Such a structure may further comprise a collector region shaped in coordination with the edge contour to provide a device having higher voltage capability. |
申请公布号 |
PL200347(A1) |
申请公布日期 |
1978.04.24 |
申请号 |
PL19770200347 |
申请日期 |
1977.08.18 |
申请人 |
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发明人 |
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分类号 |
H01L29/73;H01L21/331;H01L23/31;H01L29/06;H01L29/08;H01L29/74;H01L29/861;(IPC1-7):H01L/ |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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