OPTOELECTROTRANSDUCER AND ITS PRODUCTION

摘要

PURPOSE:To make the quantization efficiency of photo current larger than 1 and improve wavelength sensitivity by a second semiconductor region of the same conductivity type as that of a first semiconductor region having a wide band gap wherein the minority carrier recombination level within the forbidden band superposed within the forbidden band is as small as neglible near junction, over the first semiconductor region having a narrow band gap of specific conductivity type.