| 摘要 |
In a memory system comprised of a memory array having a plurality of first data lines each of which has a plurality of memory cells connected thereto and a sense circuit for discriminating the information in the memory cells, the sense circuit includes a pair of second data lines, a pair of switching elements for selectively connecting two first data lines on the memory array with the pair of second data lines in response to applied address signals, and a sense amplifier comprising a flip-flop circuit having two input nodes connected to said pair of second data lines.
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