| 摘要 |
A matrix element has a diffused zone on the surface of a semiconducting body, and has on the semiconducting surface also, an electrically isolating layer, on which there is a conductor tracing a path. The insulting layer has a first thickness above the diffuses zone and a second thickness positioned laterally to the diffused zone and at a given distance from it. The second thickness is less than the first thickness and the diffuses zone is doped with an opposing conductivity to that of the semiconducting body. The semiconducting body is of doped silicon. The semiconducting body silicon is of the type p and the diffused zone has a doping of the type n+. The insulating layer consists of SiO2. The first thickness of the insulating layer above the diffused zone and its immediate neighbourhood is about 0,5/u whilst the second thickness is about 60nm. The conductive path on the upper surface is of aluminium. The element can be used both as a light detector and as an element in a memory. The matrix can have a high density of integrated semiconductors, and is simpler and smaller than structures known until now. |
