| 发明名称 |
CHARGE TRANSFER TYPE SEMICONDUCTOR DEVICE |
| 摘要 |
PURPOSE:To increase the scale of integration while sufficiently compensating the sttenuation of signal charge within transfer channels by constituting two sets of devices in parallel folding type and inserting a regeneration circuit at every 1 reciprocation of the parallel folded transfer channels. |
| 申请公布号 |
JPS5342572(A) |
申请公布日期 |
1978.04.18 |
| 申请号 |
JP19760117498 |
申请日期 |
1976.09.29 |
| 申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
NAGASAWA KOUICHI;YAMADA MICHIHIRO;FUJISHIMA KAZUYASU |
| 分类号 |
G11C27/04;H01L21/339;H01L27/105;H01L29/762 |
主分类号 |
G11C27/04 |
| 代理机构 |
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代理人 |
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| 地址 |
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