| 发明名称 |
Method for manufacturing electrical solid state devices utilizing shadow masking and ion-implantation |
| 摘要 |
The present invention describes the manufacture of a chip having a stratum in which a number of diffusions are spaced from each other by boundaries whose widths is the width of a gap. The diffusion on one side of a boundary is formed by ion bombardment, and that on the other side by heat transfer of ions of a material with which the film has been doped.
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| 申请公布号 |
US4084987(A) |
申请公布日期 |
1978.04.18 |
| 申请号 |
US19760726796 |
申请日期 |
1976.09.27 |
| 申请人 |
PLESSEY HANDEL UND INVESTMENTS A.G. |
发明人 |
GODBER, GEOFFREY ALLAN |
| 分类号 |
H01L21/033;H01L21/225;H01L21/266;(IPC1-7):H01L21/26;H01L21/31 |
主分类号 |
H01L21/033 |
| 代理机构 |
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| 主权项 |
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