| 摘要 |
A memory plane includes a keepered word line structure formed by two cooperating molded assemblies, both having recesses for accommodating loose particles of magnetically conductive, but electrically non-conductive material. A contoured word strap assembly is partially disposed in each of said molded assemblies, after which the molded assemblies are joined together whereby the peaks of the contoured word strap assemblies define tunnels in which magnetically coated wires may be inserted, thereby completing the construction of the keepered memory plane.
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