| 摘要 |
A stress sensitive semiconductor element comprising first and second low-resistivity regions of different conductivity types formed in a common semiconductor substrate, a third region of a high resistivity the conductivity type of which is the same as that of said second region, said third region being formed in said common semiconductor substrate in contact with said first and second regions, the junction between said first region and said third region being made deeper and that between said second region and said third region being made shallower, wherein a constricted potion is provided at the center of which substantially corresponds to the junction between said first region and said second region, and the distance from the junction between the third region and the first region to that between the third region and the second region is made substantially equal to or longer than the effective diffusion length of a carrier.
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