| 摘要 |
PURPOSE:To obtain a BaTiO3 thin film of perovskite structure with improved ferroelectricity by vacuum deposition of both metallic elements Ba and Ti at a specified ratio on a single crystal substrate while generating plasma in an O2 atmosphere. CONSTITUTION:A vacuum deposition chamber is evacuated to ca. 1X10<-6>Torr and a single crystal with its (001)-plane representing the substrate surface is fixed on a substrate holder. The resultant system is heated to >=500 deg.C followed by introducing O2 gas into the chamber to make an atmosphere of 1X10<-5> to 1X10<-3>Torr. Thence, both metallic Ba and Ti are respectively fed from separate evaporation sources to the substrate and put to vacuum deposition by regulation so as to be <= several Angstrom /sec in deposition rate while controlling so as to be 1/1 in atom ratio on the substrate. Furthermore, a power of 50-500W is applied on a high-frequency coil to generate O2 plasma to promote the reaction on the substrate, thus obtaining the objective ferroelectric thin film ca.4000Angstrom thick consisting of BaTiO3 single crystal having perovskite structure. |
