| 摘要 |
<p>1507061 Integrated injection logic SIGNETICS CORP 11 March 1975 [26 March 1974] 10098/75 Heading H1K An I<2>L structure such as that shown in Fig. 3, comprises a substrate 51 forming the emitter of an inverted multi-collector switching transistor carrying a layer 53 which is penetrated by a V-shaped groove 56. In the illustrated structure current is fed to the base 57 of the switching transistor by vertical transistor 63, 62, 57 the base 62 by which is connected to the substrate by a diffused region 58 on the wall of the groove which also isolates the structure. In an alternative structure which lacks regions 63, 62 current is supplied by a transistor of which the base is constituted by region 58, and the emitter by an N + region formed in its surface. In a variant Schottky barrier collectors are used instead of junction collectors. In all cases the substrate may alternatively be lightly doped with an ionimplanted heavily doped region underlying the epitaxial island 57. Methods of manufacture involving anisotropic etching and masked diffusion steps are described.</p> |
