| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
PURPOSE:To enable high speed switching to be effected by making the base layer of lateral transistors in the double structure of a high concentration layer encircling the low concentration layer right under collector layer. |
| 申请公布号 |
JPS5338276(A) |
申请公布日期 |
1978.04.08 |
| 申请号 |
JP19760112652 |
申请日期 |
1976.09.20 |
| 申请人 |
TOKYO SHIBAURA ELECTRIC CO |
发明人 |
KANZAKI KOUICHI |
| 分类号 |
H01L21/74;H01L21/331;H01L21/8226;H01L27/02;H01L27/082;H01L29/73 |
主分类号 |
H01L21/74 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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