Plasma etching aluminium layer on silicon integrated circuits - in vacuum chamber using electrodes which are not attached by plasma gas

摘要

In an appts. for etching metal surfaces, esp. Al, in a plasma formed in a vacuum chamber contg. two electrodes creating a high frequency electric field, at least the surface of >=1 electrode consists of alumina or Ag. The two electrodes pref. consist of anodised Al, and the chamber pref. has an inlet for CCl4 or HCl. The appts. is pref. used for mfg. integrated circuits, by etching an Al layer on a silicon substrate, where the Al layer is selectively masked by photoresist. The appts. prevents the plasma gas, e.g. CCl4, from attacking the electrodes.