| 发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT |
| 摘要 |
PURPOSE:Heat treatment is facilitated and connection accuracy is improved by using connecting metals whose melting points are lower as the process is later and subsequently melting and connecting these. |
| 申请公布号 |
JPS5337383(A) |
申请公布日期 |
1978.04.06 |
| 申请号 |
JP19760111853 |
申请日期 |
1976.09.20 |
| 申请人 |
HITACHI LTD |
发明人 |
KITANO JIYUNJIROU;OKUHARA SHINJI |
| 分类号 |
H01L29/812;H01L21/338;H01L21/60;H01L23/12;H01L23/48;H01L25/065;H01L25/07;H01L25/16;H01L25/18;H01L27/00;H01L33/30;H01L33/62 |
主分类号 |
H01L29/812 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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