| 摘要 |
<p>1506125 Semiconductor devices HITACHI Ltd 5 April 1976 [7 April 1975 (2)] 13768/76 Heading H1K In a glass encapsulated semiconductor device 16 having a surface p-n junction 16alpha, connections to the device are made via lead electrodes 11, 12 having a coefficient of thermal expansion greater than that of the semiconductor device and which are soft soldered to the device. The glass 17, which acts as a passivating layer adhering to the p-n junction surface, has a coefficient of thermal expansion similar to that of the semiconductor device. The electrodes have enlarged heads 11alpha, 12a soldered or welded to portions 14, 15, which are soldered to the end faces of the semiconductor device 16. A Ni layer 13, on the electrode surfaces, prevents glass adhering to the leads during encapsulation, and leaves gaps A, B, C, D which relieve stress on the glass during encapsulation. The flanges 11b, 12b and the enlarged heads 11alpha, 12a form gas-tight seals to the glass when the electrodes 11, 12 contract on cooling, following encapsulation. In an alternative embodiment, Fig. 5 (not shown), the enlarged heads 14, 15 are soldered directly to the device. In a further embodiment, Fig. 6 (not shown), the enlarged heads take a frusto-conical form, on the surface of which are recesses or projections which provide gastight seals between the leads and the encapsulating glass, under conditions of torsional stress.</p> |
