发明名称 METHOD OF PRODUCING METALLIC CONTACTS ON SEMICONDUCTOR DEVICE
摘要 <p>A semiconductor body having metal contacts is coated, except for the metal contacts, with a masking layer composed of a heat-resistant photo-lacquer or a polyimide resin which remains on the semi-conductor body as a protective layer on the finished semiconductor device. An intermediate metal coating consisting of at least two layers of different metals is vapor-deposited over the entire semiconductor body surface. The outer layer of metal is a soft-solderable metal, such as Cu, and is applied substantially thicker in relation to the underlying intermediate metal layers. Thereafter, any excess metal on the masking layer is removed therefrom by conventional etching techniques.</p>
申请公布号 CA1029135(A) 申请公布日期 1978.04.04
申请号 CA19750228733 申请日期 1975.06.06
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 PAMMER, ERICH;SCHNELL, FRIEDRICH
分类号 H01L21/60;H01L21/00;H01L23/29;H01L23/485 主分类号 H01L21/60
代理机构 代理人
主权项
地址