| 发明名称 |
SEMICONDUCTOR INTEGRATING CIRCUIT DEVICE |
| 摘要 |
PURPOSE:To increase the switching speed and cut off frequency by reducing the quantity of accumulated hole in the N type layer and the current amplification of emitter ground, thru the provision of the P type domain near the P type base domain of NPN transistor. |
| 申请公布号 |
JPS5334482(A) |
申请公布日期 |
1978.03.31 |
| 申请号 |
JP19760109229 |
申请日期 |
1976.09.10 |
| 申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
KATOU SHIYUUICHI;TANAKA TERUICHIROU |
| 分类号 |
H01L21/8226;H01L21/331;H01L27/02;H01L27/082;H01L29/73 |
主分类号 |
H01L21/8226 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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