发明名称 Monolithic semiconductor integrated circuit chip - includes multi-layer structure providing full-wave rectifier and output amplifier
摘要 <p>The monolithic semiconductor consists of a full wave rectifier and an output amplifier integrated onto the same chip. A thin layer of the same conduction type as the epitaxial layer but more heavily doped is formed locally beneath those parts of the epitaxial layer forming the diodes in the second branch of the rectifier. The thin layer is connected to a conductor on the surface by a first zone of the same conduction type and heavily doped. The first epitaxial layer of the opposite conduction type to that of the substrate is connected to the same surface conductor by a second zone of the opposite conduction type and heavily doped.</p>
申请公布号 FR2363896(A2) 申请公布日期 1978.03.31
申请号 FR19760026408 申请日期 1976.09.01
申请人 RADIOTECHNIQUE COMPELEC 发明人 MAURICE BONIS ET BERNARD ROGER;ROGER BERNARD
分类号 H01L27/06;H01L27/08;(IPC1-7):01L27/06 主分类号 H01L27/06
代理机构 代理人
主权项
地址